Nyumbani
Kampuni
Kuhusu Xinkehui
Bidhaa
Substrate
Sapphire
SiC
Silikoni
LiTaO3_LiNbO3
Bidhaa za Macho
Epi-safu
Bidhaa za kauri
Kioo cha vito vya syntetisk
Mbeba Kaki
Vifaa vya semiconductor
Nyenzo za fuwele za chuma moja
Habari
Wasiliana
English
Nyumbani
Bidhaa
Substrate
SiC
SiC
Sehemu ndogo ya SiC Dia200mm 4H-N na HPSI Silicon carbudi
3inch SiC Uzalishaji wa substrate Dia76.2mm 4H-N
SiC substrate P na D daraja Dia50mm 4H-N 2inch
4H-N/6H-N SiC Wafer Reasearch uzalishaji wa daraja la Dummy Dia150mm Silicon carbudi substrate
2inch SiC ingot Dia50.8mmx10mmt 4H-N monocrystal
200mm SiC substrate dummy daraja 4H-N 8inch SiC kaki
4H-N Dia205mm mbegu za SiC kutoka China P na D za daraja la Monocrystaline
Kaki ya inchi 6 ya SiC Epitaxiy N/P inakubali iliyogeuzwa kukufaa
Dia150mm 4H-N 6inch SiC substrate Uzalishaji na daraja dummy
kaki ya inchi 4 ya SiC Epi kwa MOS au SBD
Kaki za inchi 4 za SiC 6H Sehemu ndogo za SiC za Kuhami Semi-msingi, utafiti na daraja la dummy
Kaki ndogo ya inchi 6 ya HPSI SiC ya Silicon Carbide ya matusi ya SiC ya nusu
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